ASUBAR JOEL TACLA

所属部署名電気・電子工学講座
教員組織電気・電子工学講座
教育研究組織工学部・工学研究科
職名准教授
更新日: 19/11/26 15:33

研究者基本情報

氏名

    ASUBAR JOEL TACLA
    アスバル ジョエル タクラ
    Asubar Joel

基本情報

所属

  •  電気・電子工学講座 准教授

学位

  • 博士(工学)
  • 修士(工学)

所属学協会

    応用物理学会 一般会員,

研究活動情報

論文

  • On the presence of Ga2O sub-oxide in high-pressure water vapor annealed AlGaN surface by combined XPS and first-principles methods
    Mary Clare S. Escaño, Joel T. Asubar, Zenji Yatabe, Melanie Y.David, Mutsunori Uenuma, Hirokuni Tokuda, Yukiharu Uraoka, Masaaki Kuzuhara, and MasahikoTani
     481 1120-1126 2019年03月 査読有り
  • Spatial distribution of substitutional Mn-As clusters in ferromagnetic (Zn,Sn,Mn)As2 thin films revealed by image reconstruction of atom probe tomography data (EDITOR'S PICK)
    Hiroto Oomae, Miyuki Shinoda, Joel T. Asubar, Kai Sato, Hideyuki Toyota, Norihito Mayama, Bakhshi Mehdiyev, and Naotaka Uchitomi
    Journal of Applied Physics 125 073902-1-073902-8 2019年02月 査読有り
  • Magnetic phase change in Mn-doped ZnSnAs2 thin films depending on Mn concentration
    Naotaka Uchitomi, Shiro Hidaka, Shin Saito, Joel T. Asubar, and Hideyuki Toyota
    Journal of Applied Physics 123 161566-1-161566-7 2018年01月 査読有り
  • Electron concentration in highly resistive GaN substrates co-doped with Si, C, and Fe
    Hirokuni Tokuda, Kosuke Suzuki, Joel T. Asubar, and Masaaki Kuzuhara
    Japanese Journal of Applied Physics 57 071001-1-071001-4 2018年06月 査読有り
  • Impact of rounded electrode corners on breakdown characteristics of AlGaN/GaN high-electron mobility transistors
    Taisei Yamazaki, Joel T. Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
    Applied Physics Express 11 054102-1-054102-5 2018年04月 査読有り
  • Analytical derivation of charge relaxation time distribution in transistor from current noise spectrum using inverse integral transformation method
    Zenji Yatabe, Shinya Inoue, Joel T. Asubar, and Seiya Kasai
    Applied Physics Express 11 031201-1-031201-4 2018年06月 査読有り
  • Correlation of AlGaN-GaN high-electron-mobility transistors electroluminescence characteristics with current collapse
    Shintaro Ohi, Taisei Yamazaki, Joel T. Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
    Applied Physics Express 11 024101-1-024101-4 2018年01月 査読有り
  • Magnetic phase change in Mn-doped ZnSnAs2 thin films depending on Mn concentration
    Naotaka Uchitomi, Shiro Hidaka, Shin Saito, Joel T. Asubar, and Hideyuki Toyota
    Journal of Applied Physics 123 161566-1-161566-7 2018年04月 査読有り
  • Analytical derivation of interface state density from sub-threshold swing in AlGaN-GaN metal-insulator-semiconductor high-electron mobility transistors
    Hirokuni Tokuda, Joel T. Asubar, and Masaaki Kuzuhara
    Japanese Journal of Applied Physics 56 104101-1-104101-5 2017年09月 査読有り
  • Effect of Reverse Bias Annealing on the Properties of AlGaN/GaN MIS-HEMTs with Recessed-gate Structure
    W. Gamachi, K. Ishii, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    IEEE International Meeting for Future of Electron Devices Kansai (IMFEDK 2017) 88-89 2017年06月 査読有り
  • Reduced Current Collapse in Multi-Fingered AlGaN/GaN MOS-HEMTs with Dual Field Plate
    Ryota Yamaguchi, Yudai Suzuki, Joel Asubar, Hirokuni Tokuda and Masaaki Kuzuhara
    IEEE International Meeting for Future of Electron Devices Kansai (IMFEDK 2017) 92-93 2017年06月 査読有り
  • AlGaN/GaN MIS-HEMTs with high on/off current ratio of over 5 × 1010 achieved by ozone pretreatment and using ozone oxidant for Al2O3 gate insulator
    H. Tokuda, J. T. Asubar, and M. Kuzuhara
    Japanese Journal of Applied Physics 55 120305-1-120305-4 2016年11月 査読有り
  • Highly-stable and low-state-density Al2O3-GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates
    S. Kaneki, J. Ohira, S. Toiya, Z. Yatabe, J. T. Asubar, and T. Hashizume
    Applied Physics Letters 109 162104-1-162104-5 2016年10月 査読有り
  • Insulated gate and surface passivation structures for GaN-based power transistors
    Z. Yatabe, J. T. Asubar, and T. Hashizume
    Journal of Physics D: Applied Physics 49 393001-1-393001-19 2016年09月 査読有り
  • Pushing the GaN HEMT towards its theoretical limit
    J. T. Asubar, J. Ng, H. Tokuda, M, Kuzuhara
    Compound Semiconductor Magazine 22 26-31 2016年10月 査読有り
  • AlGaN/GaN HEMT Technology for High-Voltage and Low On-Resistance Operation
    M. Kuzuhara, J. T. Asubar, H. Tokuda
    Japanese Journal of Applied Physics 55 070101-1-070101-12 2016年06月 査読有り
  • Large As sublattice distortion in sphalerite ZnSnAs2 thin films revealed by x-ray fluorescence holography
    K. Hayashi, N. Uchitomi, K. Yamagami, A. Suzuki, Y. Yoshizawa, J. T. Asubar, N. Happo, S. Hosokawa
    Journal of Applied Physics 125703-1-125703-9 2016年03月 査読有り
  • Breakdown degradation of AlGaN/GaN HEMTs with multi-finger gate patterns
    T. Yamazaki, Y. Suzuki, S. Ohi, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    IEEE International Meeting for Future of Electron Devices Kansai (IMFEDK 2016) 96-97 2016年06月 査読有り
  • Effect of metal electrode edge irregularities on breakdown voltages of AlGaN/GaN HEMTs
    S. Makino, S. Ohi, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    IEEE International Meeting for Future of Electron Devices Kansai (IMFEDK 2016) 94-95 2016年06月 査読有り
  • Improved Current Collapse in AlGaN/GaN HEMTs with 3-Dimensional Field Plate Structure
    A. Suzuki, K. Akira, J. T. Asubar, H. Tokuda and M. Kuzuhara
    IEEE International Meeting for Future of Electron Devices Kansai (IMFEDK 2015) 36-37 2015年06月 査読有り
  • Cu/Al/Mo/Au and Ni/Al/Mo/Au ohmic contacts for AlGaN/GaN heterostructures
    A. Sasakura, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    IEEE International Meeting for Future of Electron Devices Kansai (IMFEDK 2015) 42-43 2015年06月 査読有り
  • Current Collapse in AlGaN/GaN HEMTs with a GaN Cap Layer
    S. Yoshida, Y. Sakaida, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    IEEE International Meeting for Future of Electron Devices Kansai (IMFEDK 2015) 48-49 2015年06月 査読有り
  • High Drain Current and Low On-Resistance in AlGaN/GaN HEMTs with Au-Plated Ohmic Electrodes
    Y. Suzuki, K. Tone, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    IEEE International Meeting for Future of Electron Devices Kansai (IMFEDK 2015) 52-53 2015年06月 査読有り
  • Highly Reduced Current Collapse in AlGaN/GaN HEMTs by Combined Application of Oxygen Plasma Treatment and Field-plate Structures
    J. T. Asubar, S. Yoshida, H. Tokuda, and M. Kuzuhara
    Japanese Journal of Applied Physics 55 04EG07-1-04EG07-5 2016年03月 査読有り
  • Impact of oxygen plasma treatment on the dynamic on-resistance of AlGaN/GaN high-electron-mobility transistors
    J. T. Asubar, Y. Sakaida, S. Yoshida, Z. Yatabe, H. Tokuda, T. Hashizume, and M. Kuzuhara
    Applied Physics Express 8 111001-1-111001-4 2015年10月 査読有り
  • AlGaN/GaN HEMTs on Free-standing GaN Substrates with Breakdown Voltage of 5 kV and Effective Lateral Critical Field of 1 MV/cm
    J. Ng, J. T. Asubar, H. Tokuda, M, Kuzuhara
    CS MANTECH, Tech Dig. (2016) 215 2016 215-218 2016年05月 査読有り
  • Current Collapse Reduction in AlGaN/GaN HEMTs by High-Pressure Water Vapor Annealing
    J. T. Asubar, Y. Kobayashi, K. Yoshitsugu, Z. Yatabe, H. Tokuda, M. Horita, Y. Uraoka, T. Hashizume, and M. Kuzuhara
    IEEE Transactions on Electron Devices 62 2423-2428 2015年08月 査読有り
  • Suppressed Current Collapse in High Pressure Water Vapor Annealed AlGaN/GaN HEMTs
    Y. Kobayashi, J. T. Asubar, K. Yoshitsugu, H. Tokuda, M. Horita, Y. Uraoka, and M. Kuzuhara
    CS MANTECH, Tech Dig. 2015 185-188 2015年05月 査読有り
  • Correlation between Electroluminescence and Current Collapse in AlGaN/GaN HEMTs
    S. Ohi, Y. Sakaida, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    CS MANTECH, Tech Dig. 2015 265-268 2015年05月 査読有り
  • Calculating relaxation time distribution function from power spectrum based on inverse integral transformation method
    Zenji Yatabe, Toru Muramatsu, Joel Asubar, Seiya Kasai
    Physics Letters A 379(7) 738-742 2015年03月 査読有り
  • Interface trap states in Al2O3/AlGaN/GaN structure induced by inductively coupled plasma etching of AlGaN surfaces
    Zenji Yatabe, Joel Asubar, Taketomo Sato, Tamotsu Hashizume
    Physica Status Solidi A doi: 10.1002/pssa.201431652 2014年11月 査読有り
  • Reduced thermal resistance in AlGaN/GaN multi-mesa-channel high electron mobility transistors
    Joel Asubar, Zenji Yatabe, Tamotsu Hashizume
    Applied Physics Letters 105(5) 053510-1-053510-5 2014年08月 査読有り
  • Evaluation of Off-bias-stress Induced surface charging at AlGaN/GaN Surface Using a Dual-gate Transistor Structure
    Kenya Nishiguchi, Joel Asubar, Tamotsu Hashizume
    Japanese Journal of Applied Physics 53(7) 070301-1-070301-4 2014年07月 査読有り
  • Improved Current Stability in multi-mesa-channel AlGaN/GaN transistors
    Joel Asubar, Kenya Nishiguchi, Tamotsu Hashizume
    Physica Status Solidi c 11(42067) 857-861 2014年04月 査読有り
  • Characterization of Insulators/(Al)GaN Interfaces for Improved Insulated Gate and Surface Passivation Structures of GaN-based Transistors
    Zenji Yatabe, Yujin Hori, Wa Cheng Ma, Joel Asubar, Masamichi Akazawa, Takemoto Sato, Tamotsu Hashizume
    Japanese Journal of Applied Physics 53(10) 100213-1-100213-10 2014年01月 査読有り
  • Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs
    Kota Ohi, Joel Asubar, Kenya Nishiguchi, Tamotsu Hashizume
    IEEE Transactions on Electron Devices 60(10) 2997-3004 2013年01月 査読有り
  • Zinc-blende MnAs thin films directly grown on InP (001) substrates as possible source of spin-polarized current
    Hiroto Oomae, Joel Asubar, Shinichi Nakamura, Naotaka Uchitomi
    Journal of Crystal Growth 338(1) 129-133 2012年01月 査読有り
  • Room-temperature Ferromagnetism in (Zn,Mn,Sn)As2 Thin Films Applicable to InP-based Spintronic Devices
    Naotaka Uchitomi, Joel Asubar, Hiroto Oomate, Hironori Endo, Yoshio Jinbo
    Japanese Journal of Applied Physics 50(5) 05FB02-1-05FB02-5 2011年05月 査読有り
  • Ferromagnetic ZnSnAs2:Mn Chalcopyrite Semiconductors for InP-based Spintronics
    Naotaka Uchitomi, Joel Asubar, Hiroto Oomate, Hironori Endo, Yoshio Jinbo
    e-Journal of Surface Science and Nanotechnology 9 95-102 2011年03月 査読有り
  • Magnetic Properties and Surface Morphology of MnAs Thin Films on GaAs(111) Substrates
    K Oomori, Joel Asubar, Takayuki Ishibashi, Yoshio Jinbo, Naotaka Uchitomi
    IOP Conference Series Materials Science and Engineering 21 012024-1-012024-5 2011年03月 査読有り
  • Evidence of Pseudomorphic Growth of ZnSnAs2 Epitaxial Layers on Nearly Lattice Matched InP substrates
    Hironori Endo, Joel Asubar, Yuji Agatsuma, Yoshio Jinbo, Naotaka Uchitomi
    IOP Conference Series Materials Science and Engineering 21 012030-1-012030-5 2011年03月 査読有り
  • Dependence of MBE-grown ZnSnAs2:Mn epitaxial films properties on Mn-doping level
    Hiroto Oomae, Joel Asubar, M Haneta, Yuji Agatsuma, Yoshio Jinbo, Takayuki Ishibashi, Naotaka Uchitomi
    IOP Conference Series Materials Science and Engineering 21 012026-1-012026-5 2011年03月 査読有り
  • Annealing Effects on the Impurity Band Conduction of ZnSnAs2 Epitaxial Films
    Joel Asubar, Yuji Agatsuma, Yoshio Jinbo, Takayuki Ishibashi, Naotaka Uchitomi
    IOP Conference Series Materials Science and Engineering 21 012031-1-012031-11 2011年03月 査読有り
  • Three Dimensional Local Structure Analysis of ZnSnAs2:Mn by X-ray Fluorescence Holography
    Kouichi Hayashi, Naotaka Uchitomi, Joel Asubar, Naohisa Happo, Wen Hu, Shinya Hosokawa, Motohiro Suzuki
    Japanese Journal of Applied Physics 50(1) 01BF05-1-01BF05-4 2011年01月 査読有り
  • Anomalous Hall Effect in Mn-doped ZnSnAs2 Epitaxial Films on InP Substrates
    Hiroto Oomae, Joel Asubar, Yuji Agatsuma, Yoshio Jinbo, Naotaka Uchitomi
    Japanese Journal of Applied Physics 50 01BE12-1-01BE12-4 2011年01月 査読有り
  • Effect of thermal annealing on the properties of narrow-bandgap ZnSnAs2 epitaxial films on InP(001) substrates
    Yuji Agatsuma, Joel Asubar, Yoshio Jinbo, Naotaka Uchitomi
    Physics Procedia 3(2) 1341-1344 2010年01月 査読有り
  • High Resolution X-ray Diffraction Studies of ZnSnAs2 Epitaxial Films Nearly Lattice-matched to InP substrates
    Joel Asubar, Yuji Agatsuma, H. Yamaguchi, Shinichi Nakamura, Yoshio Jinbo, Naotaka Uchitomi
    Physics Procedia 3(2) 1351-1356 2010年01月 査読有り
  • MBE growth and Low temperature Thermal Annealing of Ferromagnetic Semiconductor (Ga,Mn)As/Zn-doped-GaAsSuperlattice Structures
    Hisayuki Nakagawa, Joel Asubar, Yoshio Jinbo, Naotaka Uchitomi
    The Institute of Electronics, Information and Communications Engineers of Japan (IEICE) Technical Report Component Parts and Materials (CPM) 107(325) 109-113 2009年11月
  • Electrical Properties of ZnSnAs2 Thin Films Grown by MBE
    Joel Asubar, Tadasuke Yokoyama, Yoshio Jinbo, Naotaka Uchitomi
    The Institute of Electronics, Information and Communications Engineers of Japan (IEICE) Technical Report Component Parts and Materials (CPM) 107(325) 103-107 2009年11月
  • Impurity Band Conduction and Negative Magnetoresistance in p-ZnSnAs2
    Joel Asubar, Yoshio Jinbo, Naotaka Uchitomi
    Phys. Status Solidi (c) 6(5) 1158-1161 2009年05月 査読有り
  • Fabrication and Structural Characterization of Nearly Lattice-matched p-ZnSnAs2/n-InPHeterojunctions
    Joel Asubar, Shinichi Nakamura, Yoshio Jinbo, Naotaka Uchitomi
    IEEE Indium Phosphide & Related Materials 2009 255-258 2009年05月 査読有り
  • MBE Growth and Characterization of Mn-doped ZnSnAs2 Chalcopyrite Thin Films on Si (001) Substrates
    Yuji Agatsuma, Joel Asubar, Yoshio Jinbo, Naotaka Uchitomi
    Japan Society of Applied Physics Ternary and Multinary Compounds Professional Group 2008 Conference Report 149 2009年03月
  • Evidence of Impurity Band Conduction in ZnSnAs2 Epitaxial Films
    Joel Asubar, Yoshio Jinbo, Naotaka Uchitomi
    Japan Society of Applied Physics Ternary and Multinary Compounds Professional Group 2008 Conference Report 121 2009年03月
  • MBE Growth and Properties of GeMn thin films on (001) GaAs
    Ryutaro Tsuchida, Joel Asubar, Yoshio Jinbo, Naotaka Uchitomi
    Journal of Crystal Growth 311(3) 937-940 2009年01月 査読有り
  • Low-temperature Annealing Effects on (Ga,Mn)As/Zn-GaAsSuperlattice Structure Grown on GaAs(001) substrates
    Joel Asubar, Hisayuki Nakagawa, Yoshio Jinbo, Naotaka Uchitomi
    Japanese Journal of Applied Physics 311(3) 933-936 2009年01月 査読有り
  • MBE Growth of Mn-doped ZnSnAs2 thin-films
    Joel Asubar, Yoshio Jinbo, Naotaka Uchitomi
    Journal of Crystal Growth 311(3) 929-932 2009年01月 査読有り
  • Comparison of Annealing Effects on Zn-doped GaMnAs and undoped GaMnAs epilayers
    Hisayuki Nakagawa, Joel Asubar, Yoshio Jinbo, Naotaka Uchitomi
    Applied Surface Science 254(20) 6648-6652 2008年08月 査読有り
  • Electrotransport Properties of p-ZnSnAs2 Thin films Grown by Molecular Beam Epitaxy on Semi-insulating (001) InP Substrates
    Joel Asubar, Ariyuki Kato, Yoshio Jinbo, Naotaka Uchitomi
    Japanese Journal of Applied Physics 47(1) 657-660 2008年01月 査読有り
  • MBE Growth of Mn-doped Zn-Sn-As compounds on (001) InP Substrates
    Joel Asubar, Ariyuki Kato, Toshio Kambayashi, Shinichi Nakamura, Yoshio Jinbo, Naotaka Uchitomi
    Journal of Crystal Growth 301 656-661 2007年04月 査読有り
  • MBE Growth and Properties of GaMnAs with High Level of Zn Acceptor Incorporation
    Joel Asubar, Shinya Sato, Yoshio Jinbo, Naotaka Uchitomi
    Phys. Status Solidi (a) 203(11) 2778-2782 2006年09月 査読有り
  • Effect of Low temperature Thermal Annealing on the Properties of Zn-doped Ferromagnetic Semiconductor (Ga,Mn)As
    Hisayuki Nakagawa, Joel Asubar, Yoshio Jinbo, Naotaka Uchitomi
    Japan Society of Applied Physics Ternary and Multinary Compounds Professional Group 2006 Conference Report 29 2006年03月
  • Structural Investigation of Mn-doped ZnSnAs2 Thin Films Grown by MBE on InP (001) Substrates
    Joel Asubar, Ariyuki Kato, Shinichi Nakamura, Yoshio Jinbo, Naotaka Uchitomi
    Japan Society of Applied Physics Ternary and Multinary Compounds Professional Group 2006 Conference Report 33 2006年03月
  • Zn Incorporation and Its Effect on the Properties of GaMnAs Ferromagnetic Semiconductors Grown by Molecular Beam Epitaxy
    Joel Asubar, Shinya Sato, Yoshio Jinbo, Naotaka Uchitomi
    Japan Society of Applied Physics Ternary and Multinary Compounds Professional Group 2006 Conference Report February 2005 185 2005年02月

講演・口頭発表等

  • Impact of regrown AlGaN layer on the properties of Al2O3/AlGaN/GaN metal-insulator-semiconductor structures
    Joel T. Asubar, Shinsaku Kawabata, Low Rui Shan, Hirokuni Tokuda, Akio Yamamoto, Masaaki Kuzuhara
    Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE 2019) Cabourg (France) 17 Jun 2019 2019年06月 選考有り
  • A method for deriving interface state density from sub-threshold swing in AlGaN/GaN MIS-HEMTs
    H. Tokuda, J. T. Asubar, and M. Kuzuhara
    IS-Plasma 2018, Nagoya (Japan) (2018.03) 2018年03月 選考有り
  • Study on breakdown field in Fe-doped semi-insulating GaN substrates
    A. Aoai, K. Suzuki, J. T. Asubar, H. Tokuda, N. Okada, K. Tadatomo, and M. Kuzuhara
    IWN-2018,ThP-ED-2,Kanazawa (Japan) (2018.11) 2018年11月 選考有り
  • Threshold voltage hysteresis in GaN-based vertical trench MOSFETs
    S. Murata, M. Sasada, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    IWN-2018,TuP-ED-6,Kanazawa (Japan) (2018.11) 2018年11月 選考有り
  • Impact of air annealing on performance of AlGaN/GaN MISHEMTs with recessed gate structures
    S. Kawabata, W. Gamachi, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    IWN-2018,TuP-CR-23,Kanazawa (Japan) (2018.11) 2018年11月 選考有り
  • Characterization of AlGaN/GaN MOS-HEMTs with gate field plate
    T. Nishitani, R. Yamaguchi, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    IWN-2018,MoP-ED-13 (2018.11) 2018年11月
    Kanazawa (Japan)
  • Effect of post-gate deposition annealing on the electrical characteristics of AlGaN/GaN HEMTs with p-GaN gate
    S. Kawabata, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    IEEE IMFEDK,Kyoto (Japan) (2018.06) 2018年06月 選考有り
  • Reduced current collapse in AlGaN/GaN HEMTs with p-GaN layer at gate-drain region
    T. Ozawa, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    IEEE IMFEDK,Kyoto (Japan) (2018.06) 2018年06月 選考有り
  • Improved current collapse in AlGaN/GaN MOS-HEMTs with dual field-plates
    T. Nishitani, R. Yamaguchi, T. Yamazaki, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    IEEE IMFEDK,Kyoto (Japan) (2018.06) 2018年06月 選考有り
  • Characterization of resistivity and breakdown field in Fe-doped semi-insulating GaN substrates
    A. Aoai, K. suzuki, J. T. Asubar, H. Tokuda, M. Kuzuhara, K. Nojima, N. Ishibashi, N. Okada, and K. Tadatomo
    IEEE IMFEDK,Kyoto (Japan) (2018.06) 2018年06月 選考有り
  • Study on threshold voltage hysteresis in GaN-based vertical trench MOSFETs
    S. Murata, M. Sasada, J. T. Asubar, H. Tokuda, K. Ueno, M. Edo, and M. Kuzuhara
    IEEE IMFEDK,Kyoto (Japan) (2018.06) 2018年06月 選考有り
  • Characterization of resistivity and breakdown field in Fe-doped semi-insulating GaN substrates
    K. Suzuki, A. Aoai, J. T. Asubar, H. Tokuda, K. Nojima, N. Ishibashi, N. Okada, K. Tadatomo, and M. Kuzuhara
    WOCSDICE,Bucharest (Romania) (2018.05) 2018年05月 選考有り WOCSDICE
  • AlGaN/GaN MOS-HEMTs with dual field plates for stable high-performance operation
    R. Yamaguchi, T. Yamazaki, T. Nishitani, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    CS MANTECH,14.14,Austin(USA),Digest of CS-MANTECH 2018 (2018.05) 2018年05月 選考有り CS MANTECH